The role of hole leakage in 1300-nm InGaAsN quantum-well lasers
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چکیده
منابع مشابه
The role of hole leakage in 1300-nm InGaAsN quantum-well lasers
We calculate the thermionic escape times of electrons and holes in InGaAsN and InGaAs quantum wells using the most recent input data. The short thermionic escape time of holes from the InGaAsN quantum well indicates that hole leakage may be a significant factor in the poorer temperature characteristics of InGaAsN quantum-well lasers compared to those of InGaAs devices. We suggest a structure th...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2003
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.1558218